As the major portion of the industry adopts FinFETs as the workhorse transistor for 16nm and 14nm, researchers worldwide are looking into the limits of FinFETs and potential device solutions for the ...

Use left and right arrow keys to seek audio. Samsung has announced that it has kicked off the initial production of its next-gen 3nm process node, using Gate-All-Around (GAA) transistor architecture.

The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its ...

The next frontier in U.S. semiconductor restrictions for Chinese companies is gate-all-around (GAA) chip manufacturing technology. According to a Bloomberg report, measures are being discussed to ...

The most important significance of Samsung Electronics recently commercializing its 3nm GAA (gate-all-around) process technology lies in leading the paradigm shift of next-generation transistor ...

The number of questions about finFETs is increasing—particularly, how long can they continue to be used before some version of gate-all-around FET is required to replace them. This discussion is ...

In brief: While covering a wide range of topics during his keynote at Nvidia's GTC, CEO Jensen Huang briefly touched on the company's GPU roadmap beyond the upcoming Rubin architecture. The Feynman ...

According to the Taiwan Economic Daily, TSMC’s 2nm process has made a major breakthrough. The research and development process is now in advanced stages. The company is optimistic that its risk trial ...

The IC industry is already weeding out the candidates. In 2005, the Semiconductor Research Corp. (SRC), a chip R&D consortium, launched the Nanoelectronics Research Initiative (NRI), a group that is ...

Hsinchu, Taiwan – Attopsemi, a pioneering provider of innovative One-Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse® technology has ...