This gate-drive transformer (GDT)circuit allows the drive signal to the MOSFET to range from 50% down to 0%, while still offering a fast turn-off that cannot be accomplished with a simple load ...

TSMC’s roadmap announcement for their 28 nm node yesterday has stirred considerable controversy already. The issue is the company’s decision to divide their process development into two tracks: one to ...

As part of its research into GaN transistor power supplies, the University of Bristol has created the fastest active gate driver ever – 10x quicker than anything reported so far. Active drivers ...

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...

When designing a product portfolio with a wide range of voltage and power requirements, finding a single driver design solution to serve the full portfolio can deliver significant savings in time and ...

Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold ...

How is peak current defined? A close look at datasheet headlines and how they vary. A case study that compares different drivers and peak currents. One question often comes up when considering what ...

Energy saving: artist’s impression of the gate material with negative capacitance. (Courtesy: Ella Maru Studio) By exploiting a curious effect called negative capacitance, researchers have designed a ...