Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...
MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...
Wolfspeed is bringing the power-handling properties of silicon carbide (SiC) to the renewable energy, energy storage, and high-capacity EV fast-charging sectors with its new family of 2,300-V power ...
A stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by one-fold, SiC power modules allow for ...
Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...
Navitas Semiconductor, an industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, announced the sample availability of its new 3300V ...
In the first part of this blog, we had a look at how energy-efficient high-power modules contribute to the decarbonization of railway transportation. This part will focus on the future of traction: ...
A new silicon carbide (SiC) module built around 1,200 V MOSFETs targets demanding applications requiring bidirectional power flow or a broader range of control. That includes solar inverters as well ...
Manufacturers of silicon carbide (SiC) and gallium nitride (GaN) power ICs leveraged the APEC 2024 conference to highlight their latest developments in wide-bandgap semiconductors. These devices offer ...
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