Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...
Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...
The shielded-gate MOSFET can now provide the answer for designers of dc/dc power supplies in the 40 to 200-V range Regulatory bodies as well as end customers find themselves striving for higher ...
TLP5814H has an operating temperature rating of -40 to 125°C. Toshiba Electronic Devices & Storage Corp. has launched a gate driver photocoupler, TLP5814H, with an output of +6.8A/-4.8A, in a small ...
An improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results