MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium to ...
TORRANCE, Calif., April 17, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride ...
Navitas Semiconductor has entered into higher power markets with the introduction of silicon carbide (SiC) power products in SiCPAK SiC modules and bare die. Target applications include solar ...
Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
When it comes to reliability research on SiC power devices, The Ohio State University (OSU) has been at the vanguard. Several aspects of the SiC power MOSFET reliability, including threshold voltage ...
Microsemi Corporation announced the availability of a new generation of industrial temperature, silicon carbide (SiC) standard power modules. A line of industrial temperature, silicon carbide (SiC) ...
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