Gate-All-Around Transistors: In a new design, the transistor channel is made up of an array of vertical nanowires. The gate surrounds all the nanowires, which improves its ability to control the flow ...

New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva™ pure radical ...

For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5-nanometer ...

The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.

GaN-based electronics are known for their ability to reduce energy losses and shrink the size of power converters and related ...

Advanced Micro Devices has developed two sets of next-generation transistors using different approaches that produce higher levels of performance than conventional transistors, the company said at the ...

Advanced Micro Devices on Thursday unveiled an experimental transistor with three gates, in a continued effort to find ways to increase performance while conserving electricity. The transistor, which ...

For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5-nanometer ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

At an event today in San Francisco, Intel announced one of the most important pieces of semiconductor news in many years: the company’s upcoming 22nm processors will feature a fundamental change to ...