The ISL73096EH is a radiation hardened ultra high frequency NPN/PNP transistor array. It contains three NPN transistors and two PNP transistors on a common substrate. The device covers all of the ...

Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into ...

Transistors that can change properties are important elements in the development of tomorrow's semiconductors. With standard transistors approaching the limit for how small they can be, having more ...

The semiconductor industry is making its first major change in a new transistor type in more than a decade, moving toward a next-generation structure called gate-all-around (GAA) FETs. Although GAA ...

Forward-looking: The billions of transistors hidden within a single CPU are manufactured to execute just one specific function. A team of Viennese scientists, however, aims to introduce ...

MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...