EDN

Ku-band GaN HEMTs suit small earth stations

Mitsubishi expands its GaN HEMT lineup for satellite communication earth stations with two devices for the low Ku-band spanning 12.75 GHz to 13.25 GHz. One of the HEMT devices is for multicarrier ...
New Electronics

C-band GaN HEMT Amplifiers for satellite applications

Mitsubishi Electric is introducing the world's first GaN high electron mobility transistor (HEMT) power amplifiers, exclusively designed for use in satellite applications in the 3.7-4.2GHz band.
Electronics Weekly

GaN-on-SiC transistors for S-band radar

Integra Technologies, the RF and microwave transistor and amplifier specialist, has announced a pair of 135 W and a 130 W GaN-on-SiC transistors for S-band radar applications. IGT2731M130 is a 50-Ohm ...
EDN

TOSHIBA EXPANDS GaN HEMT PRODUCT FAMILY WITH POWER AMPLIFIERS FOR Ku-BAND SATCOM AND X-BAND RADAR APPLICATIONS

High Power, High Gain Devices Include Toshiba’s First GaN Amplifier for SATCOM, and an X-Band Amplifier for Radar Applications IRVINE, Calif., June 16, 2008 — Toshiba America Electronic Components, ...
Nasdaq

Mitsubishi Electric to Expand Range of Ku-band GaN-HEMT Lineup

Accommodates Low-Ku band, extra-large data capacity and small SATCOM earth stations Ku-band satellite communication systems are increasingly being deployed for emergency communications during natural ...
Electronic Design

Wolfspeed demonstrates GaN HEMT devices at IMS

San Francisco, CA. Wolfspeed, a Cree Company and leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), touted several ...
Electronic Design

GaN HEMT Transistors Enable Efficient S-Band Radar Apps

The company’s latest GaN HEMT power transistors and high power amplifier (HPA) MMIC achieve typical power-added efficiencies of 60%, translating into a reduction in power consumption up to 20% over ...
Business Wire

Mitsubishi Electric to Expand Product Range of Ku-band GaN HEMTs

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that two new 13.75–14.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) ...
Yahoo Finance

ROHM’s High 8V Gate Withstand Voltage Marking Technology Breakthrough for 150V GaN HEMT

ROHM introduces the industry’s highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices ROHM introduces the industry’s highest (8V) gate breakdown voltage ...
Security

Toshiba Expands GaN HEMT Product Family With Power Amplifiers for Ku-band SATCOM and X-Band Radar Applications

IRVINE, Calif. , June 16 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC) announced the addition of two new gallium nitride (GaN) semiconductor High Electron Mobility Transistors ...
The Globe and Mail

Mitsubishi Electric to Expand Range of Ku-band GaN-HEMT Lineup

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that two new 12.75-13.25 GHz (Low-Ku band) 70W (48.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to ...