Rigorous testing demonstrates the reliability and robustness of commercial 1250 V GaN HEMTs paired with a low-voltage silicon MOSFET to ensure normally-off operation. Material properties govern the ...
Runxian Xing, Hongyang Guo, Bohan Guo, Guohao Yu, Ping Zhang, Jia’an Zhou, An Yang, Yu Li, Chunfeng Hao, Huixin Yue, Zhongming Zeng, Xinping Zhang, Baoshun Zhang ...
Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...
Wolfspeed, a global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has extended its family of 50-V unmatched GaN HEMT RF power ...
NexGen Power Systems Inc. is fabricating vertical power devices (vertical gallium nitride, or vertical GaN) using homoepitaxial GaN on GaN substrates. Vertical GaN devices are capable of switching at ...
Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 40V bi-directional GaN-on-Si enhancement mode ...
Wolfspeed has introduced 28V GaN HEMT RF power devices capable of higher frequency operation to 8GHz. The 28V GaN HEMT devices are made on Wolfspeed’s 0.25µm GaN-on-SiC process, and are designed with ...
Innoscience Technology, a developer of gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced a full range of 650V E-mode GaN HEMT devices. New devices added to its portfolio include: ...
Gallium Nitride (GaN) has demonstrated tremendous potential in semiconductor technology for a variety of high-power applications in recent years. When compared to silicon-based semiconductor devices, ...
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