In recent days, ON Semiconductor reported stronger-than-expected third-quarter 2025 results, announced a US$6.00 billion share buyback program starting in 2026, and disclosed a new collaboration with ...
This semiconductor stock is up 165% in 2025. 1 reason this could be just the beginning. Navitas Semiconductor shares have ...
Innoscience announced the signing of a memorandum of understanding to evaluate opportunities to accelerate deployment of GaN ...
This is a promising stock to ride the artificial intelligence (AI) infrastructure boom, but it won't be a smooth ride for ...
(Nanowerk News) Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl’s best friend. Their groundbreaking research focuses on gallium nitride (GaN) ...
While 5G applications are proliferating everywhere, the industry continues to face a myriad of challenges implementing the technology. One of them has been the performance limitations of ...
The Q3 2025 patent landscape confirms GaN’s accelerating industrial expansion. During the quarter, 599 new patent families ...
STMicroelectronics’ new GaN ICs platform for motion control boosts appliance energy ratings High-efficiency GaN power integrated technology tailored for motor drives in white goods and factory ...
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
GaN power semiconductors from STMicro reduce energy use and enable slimmer designs in a wide variety of electronic products. The company’s G-HEMTs and G-FETs can be used in chargers, external power ...
Ampleon has launched four 700-W GaN-on-SiC RF transistors for S-band radar systems, operating between 2.7 GHz and 3.5 GHz. The CLS3H2731 and CLS3H3135 series leverage a radar-optimized GaN-on-SiC ...
MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...