Santa Clara, CA and Kyoto, Japan, March 21, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced ultra-high-speed control IC technology that maximizes the performance of GaN and other ...
Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds ...
Innoscience announced the signing of a memorandum of understanding to evaluate opportunities to accelerate deployment of GaN ...
MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
KIYOSU, Japan--(BUSINESS WIRE)--Toyoda Gosei Co., Ltd. (TOKYO:7282) and Powdec K.K. have jointly developed 1 a high-performance horizontal GaN power device that will lead to improved performance in ...
How GaN provides superior power designs compared to silicon. Why LLC resonant topologies are best. Traditional power transistors have long contributed to power losses (aka lower efficiency) in ...
An 8 Gbps high-speed relay MMIC for an Automated Test Equipment (ATE) using a gallium nitride is developed and evaluated. Metal-Insulator-Semiconductor structure with a tantalum oxynitride is employed ...
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