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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Compound Semiconductor

KnowMade GaN patent monitor shows surging innovation

The Q3 2025 patent landscape confirms GaN’s accelerating industrial expansion. During the quarter, 599 new patent families ...