Compound Semiconductor

GaN: Reducing the on-resistance of GaN p-n diodes

Engineers from North Carolina State University, Adroit Materials and Poland’s Institute of High-Pressure Physics have reduced ...
IEEE

Single-Event Transients in Vertical GaN Diodes With N-Implanted Hybrid Edge Termination

Abstract: Vertical gallium nitride (GaN) power devices require effective edge termination for mitigating peak electric fields to achieve high breakdown voltages. The edge termination region, depending ...
The Mag

Premier League form table is now updated and worth a look ahead of West Ham v Newcastle

This is how the Premier League form table looks on Sunday morning. Newcastle United now eleven weeks into their season. A busy time with already 14 games played this season in all competitions. In ...
C&EN

Step-by-Step Electrocrystallization Processes to Make Multiblock Magnetic Molecular Heterostructures

Please note: If you switch to a different device, you may be asked to login again with only your ACS ID. Please note: If you switch to a different device, you may be asked to login again with only ...
yr.no

Crab Creek Junction

It looks like you're using an old browser. To access all of the content on Yr, we recommend that you update your browser. It looks like JavaScript is disabled in your browser. To access all the ...
yr.no

Paget Junction

It looks like you're using an old browser. To access all of the content on Yr, we recommend that you update your browser. It looks like JavaScript is disabled in your browser. To access all the ...