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  1. IRFZ44N - N-channel power MOSFETs | Infineon Technologies

    IRFZ44N is a N-channel power MOSFETs with VDS max: 55 V, RDS (on) max: 17.5 mOhm, Package: TO-220, Technology: IR MOSFET™, ID max: 49 A

  2. IRFZ44N Datasheet (PDF) - NXP Semiconductors

    Description: N-channel enhancement mode TrenchMOS transistor. Manufacturer: NXP Semiconductors.

  3. IRFZ44N: The Ultimate Guide to This Powerful MOSFET Transistor

    This article provides an overview of the IRFZ44N, including its features, applications, pin configuration, circuit design, electrical characteristics, available alternatives, and …

  4. IRFZ44N MOSFET Pinout, Features, Equivalents & Datasheet

    Apr 18, 2019 · The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start …

  5. IRFZ44N by NXP USA Inc. Datasheet | DigiKey

    View IRFZ44N by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.

  6. IRFZ44N MOSFET: N-Ch, 55V, 49A. Full datasheet with pinout ...

    The IRFZ44N is an N-channel power MOSFET widely used in switching and amplification applications. It features a low on-resistance of 0.017Ω, allowing high current conduction up to …

  7. IRFZ44N: Features, Applications, and Circuit Design Guide

    Jun 3, 2025 · The IRFZ44N MOSFET is specifically designed for applications like motor drivers, inverters, SMPS, and LED systems. And, this is because of its high current carrying capacity, …

  8. IRFZ44N: A Complete Guide on Using This MOSFET - Alumina PCB

    Apr 11, 2024 · The IRFZ44N is a popular N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in various electronic applications. It is known for its high current …

  9. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

  10. enhancement mode transistor IRFZ44N GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ …